| 학회 |
한국재료학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 |
13권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
Comparison of the efficiencies of CIGS solar cells using transparent conducting Al-doped ZnO window layers with i-ZnO buffer layer |
| 초록 |
Al-doped ZnO has been investigated as a transparent conducting oxide (TCO) for optoelectronic devices for decades. In solar cells, especially Cu(In,Ga)Se2 (CIGS), Al-doped ZnO film was used as a top or bottom transparent conducting window layer. In this paper, we have studied the comparison of the efficiencies of CIGS solar cells using of Al-dopedZO thin films with i-ZnO by different deposition method. ZnO:Al thin films were deposited by RF magnetron sputtering. The CIGS solar cells with an Al/ZnO:Al/CdS/CIGS/Mo and an Al/ZnO:Al/i-ZnO/CdS/CIGS/Mo structure were fabricated. The 50nm-thick-intrinsic ZnO thin films were deposited by RF magnetron sputtering and by atomic layer deposition, respectively. |
| 저자 |
Jae-Sung Hur1, Chang-Sik Son2, Jung-Bin Song1, Samseok Jang1, Jae Ho Yun3, Kyung Hoon Yoon3
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| 소속 |
1Korea Univ., 2Silla Univ., 3Korea Institute of Energy Research |
| 키워드 |
TCO; CIGS; conversion efficiency
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| E-Mail |
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