| 초록 |
Binary chalcogenide SnSe has recently risen as a novel material that can be used in photovoltaic and thermoelectric applications. The SnSe thin film consists of earth-abundant materials, and is known to have a suitable optical band gap of 1.2eV and an absorption coefficient of ~105cm-1 , which are ideal for photovoltaic applications. Despite these benefits, high efficiency SnSe solar cells have not been reported because of the difficulty in the preparation of single-phase SnSe thin films and because of their overly electro-conductive characteristic with respect to photovoltaic applications. Here, we prepared single phase SnSe thin films by thermal co-evaporation using an elemental Sn source and a Se thermal cracker and introduce a dopant for the control of the electrical properties of prepared SnSe thin films. Material properties of prepared SnSe thin films were studied by SEM, UV-vis spectroscopy, X-ray diffraction and Raman measurements, and electrical properties, modified by introducing dopants, were analyzed by Hall measurement. Details of the film preparation process as well as analysis of material properties of single phase SnSe thin films will be discussed |
