| 학회 |
한국재료학회 |
| 학술대회 |
2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 |
19권 2호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
AC Ddielectric and Conductivity Relaxation of CsSn2F5 Ceramic |
| 초록 |
The ac electrical data of RbSn2F5 are analyzed in the σ*(f), M*(f) and ε*(f) formalism. The ac conductivity exhibited a power law behavior with the presence of low frequency dispersion at high temperatures. The conductivity relaxation time is determined from the maximum of the peaks of the modulus formalism associated with an activation energy of 0.56eV, which agrees well with the dc conductivity activation energy, ΔEσ=0.55eV, suggesting a hopping mechanism for the ionic conduction. Ahuge increasse of the dielectric constant is observed at low frequency due to space charge polarization. The dielectric relaxation phenomena were detected from the peaks of the frequency dependence of the dissipation factor, tan δ. The activation energy and the relaxation time of the dielectric relaxation have been determined. |
| 저자 |
박종호 |
| 소속 |
진주교육대 |
| 키워드 |
dielectric constant; modulus; ceramic
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| E-Mail |
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