| 학회 | 한국고분자학회 |
| 학술대회 | 2002년 가을 (10/11 ~ 10/12, 군산대학교) |
| 권호 | 27권 2호, p.214 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Molecular Resists Based on t-Butyl Cholate Derivatives for 193-nm Photoresists |
| 초록 | To satisfy the updating demand of next generation of lithography, new chemically amplified resist materials should be developed that can perform at the limit where the image feature size is on the order of molecular dimensions. Herein we studied several dendritic molecular resist materials for 193 nm photoresists. t-Butyl cholate was used as a dendrimer core and ester groups as peripheral parts. Ester groups are attached to 3-α, 7-α, 12-α positions of t-butyl cholate. These materials were synthesized using an acetal-protected anhydride derivative of 2,2-bis(hydroxymethyl)proponic acid as an acylating reagent. The t-butyl cholate has high etch-resistance and it acts as dissolution inhibitor. To give solubility change, t-BOC groups are attached to the end of peripheral parts. The number of t-BOC groups increases to 3*2n as generation goes to the higher level. The large number of t-BOC groups can give high sensitivity to the resist materials. Their peripheral parts are composed of ester groups. Because cholate has some hydrophobic property these ester groups can give resist materials hydrophilicity which gives adhesion property to the resist materials. |
| 저자 | 김진백1, 오태환2, 권영길 |
| 소속 | 1한국과학기술원 화학과, 2분자과학사업단(BK21) & 기능성고분자연구센터 |
| 키워드 | dendrimer; t-butyl cholate; molecular resists; amorphous material; ArF lithography; chemically amplified photoresist |
