| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 가을 (10/08 ~ 10/09, 광주과학기술원 오룡관) |
| 권호 |
34권 2호 |
| 발표분야 |
고분자 합성 |
| 제목 |
Synthesis of Photoacid Generator Bound Polymer Resist for Atomic Force Microscope Lithography |
| 초록 |
Atomic force microscope (AFM) technique is the most promising method to fabricate nanopatterns. A new monomer, biphenyl sulfonium triflate 4-benzyl methacrylate(BPSTMA) and polymer, poly(tBVPC-co-MMA-co-BPSTMA) based on photoacid generator (PAG) were synthesized as PAG containing resist for AFM lithography. And those were characterized not only by FTIR, NMR to confirm its structures, but also by TGA, DSC for thermal properties. PAG containing resists exhibited good thermal stability. The patterning process was applied at the positive bias on a tip. The resist was successfully applied for the fabrication of nano-scale patterns. |
| 저자 |
이고은, 아쇽나뉴사가, 김민정, 손경화, 이해원
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| 소속 |
한양대 |
| 키워드 |
Photoacid Generator |
| E-Mail |
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