| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Photoelectrochemical performance and stability of Cu(In,Ga)Se2 photocathode with TiO2-coupled buffer layers |
| 초록 |
We investigated photoelectrochemical (PEC) performance and stability of Cu(In,Ga)Se2 photocathode for hydrgoen evolution. Various buffer layers—CdS, ZnO, TiO2, and a combination of the aforementioned, were formed on top of the CIGS photocathodes to facilitate charge separation and transport. A multilayered CIGS photocathode consisting of CIGS/CdS/TiO2/Pt showed best current-potential characteristics and applied bias-photon-to current efficiency of 2.6 % among tested photocathodes. However, its stability was limited by the physical delamination of TiO2 overlayer from CdS. Although the PEC performance of CIGS/ZnO/TiO2/Pt photocathode resulted in similar efficiency, its stability was over twice as high as the CdS/TiO2 coupled CIGS photocathode. In particular, the degradation mechanisms are strongly dependent on homogeneity between layers, which characterize the durability of the TiO2 overlayer residing on n-type buffer layers. The effect of buffer layers on PEC performance and stability with in-depth chemical characterizations will be discussed. |
| 저자 |
Bonhyeong Koo1, Sung-Wook Nam2, Richard Haight3, Suncheul Kim1, Seungtaeg Oh1, Jihun Oh1, Jeong Yong Lee1, Byung Tae Ahn1, Byungha Shin1
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| 소속 |
1KAIST, 2IBS, 3IBM T. J. Watson |
| 키워드 |
<P>Cu(In; Ga)Se<SUB>2</SUB> photocathode; Photoelectrochemical water splitting; TiO<SUB>2</SUB> overlayer; Buffer layer</P>
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| E-Mail |
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