| 초록 |
Organic photodiode for image sensor application should possess low noise current as well as high photocurrent to achieve high signal-to-noise ratio. In the case of inverted diode structure, devised to avoid of using PEDOT:PSS with high acidity, insertion of ZnO or similar oxide layers between ITO and active layer has been regarded as essential to realize high rectification ratio and thus high signal-to-noise ratio. Considering various disadvantages of ZnO interlayer such as toxic fabrication process, high fabrication temperature and introduction of inorganic/organic interface, here we suggest of using cationic surfactant as an additive of blend solution of bulkheterojunction (BHJ) materials and deposition of the solution onto ITO without using ZnO interlayer. |
