| 초록 |
β phase Ga2O3 (β-Ga2O3) has recently gained a lot of interest for applications in high power devices, solar-blind photodetectors, and gas sensors. The interest stems from its intrinsic material properties, such as wide bandgap nature of 4.9 eV and high breakdown electric field of 8 MV cm−1, leading to making its devices more efficient with small size dimensions for high power device and harsh environmental sensor. The wide bandgap nature enables Ga2O3 based electronic devices to operate at high temperatures due to its low intrinsic carrier concentration. The large lattice constant of 12.23 Å of β-Ga2O3 along [100] direction enables to achieve the facile cleavage of β-Ga2O3 crystal into 2-dimensional flake though β-Ga2O3 is not a Van der Waals material. The thin channel of Ga2O3 flake is beneficial to the FET (field effect transistor) type gas sensor. In this study, the electric characteristics of 2 dimensional β-Ga2O3 flake base field effect transistor was investigated by the device simulation, and the results were compared with that of the fabricated device. |
