| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | High performance graphene photodetector with van der Waals heterostructure through tuning carrier tunneling |
| 초록 | In the present decade, graphene, which is one of the large number of possible two-dimensional (2D) materials, is considered as a remarkable material for photonics and optoelectrics due to their specific properties such as gapless band structure which enables to modulate optical properties, ultra-fast carrier mobility which makes a fast modulation, a wide absorption ranges from ultra-violet (UV) to far-infrared (FIR), transparency and flexibility. However, a weak absorption properties and small built-in potential in a monolayer of carbon atoms have limited the properties such as an external quantum efficiency (EQE) range of ~ 0.1 - 1 % and a responsivity of a few of mAW-1. Also, existing graphene-based photodetector with the lateral structure which has a photo response near graphene-metal junction is not an ideal for the harvesting efficient photons. To increase optoelectric properties in graphene, large number of devices integrating with other 2D transition metal dichalcognides (TMDCs) materials and Quantum dots (QDs) materials which have high absorption properties were developed recently. However, integration with these materials limits the absorption range due to their own bandgap even graphene has advantages in large absorption range. Here, we developed large absorption range to infra-red (IR) range graphene photodetector with metal/insulator/graphene heterostructure by controlling the Schottky barrier. The absorption range can be controlled by utilize with different materials by controlling Schottky barrier. In visible range, we used Au/h-BN/graphene heterostructure which the existence of the h-BN tunneling layer makes extremely low dark current ~10-13 A. As the result, our photodetector has the high Iph/Idark over ＞20 contrast to reported lateral graphene photodetector which has under 5. Finally, we also show the possibility of the IR photodetector with Ni/NiO/graphene heterostructure. Schematic of Au/h-BN/graphene photodetector Acknowldgments This work was supported by the BK21 Plus program. References [1] Geim, a K.; Grigorieva, I. V. Nature 2013, 499 (7459), 419–425. |
| 저자 | 조계환, 김영래, 신용선, 강원태, 원의연, 유우종 |
| 소속 | 성균관대 |
| 키워드 | graphen; carrier tunneling |
