| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 | 30권 2호 |
| 발표분야 | 고분자 합성 |
| 제목 | A Novel Chemically Amplified Photosensitive Polyimide Based on Norbornene End-Capped Poly(amic acid ethoxymethylester) |
| 초록 | Positive-working PSPIs have recently been used as buffer coatings in semiconductor packaging, replacing conventional polyimides.1 For use as buffer coatings, PSPIs have to exhibit good mechanical properties such as high elongation at break and high tensile strength if they are to protect the bare chip from the stresses induced by fillers in molding compounds and by the thermal mismatch between the passivation layer and the molding compound. However, PSPIs, particularly positive working type, are not easy to ensure the mechanical properties of PI films, because of the photosensitive group and additives such as photoactive compounds. In this work, a positive-working chemically amplified photosensitive polyimide (PSPI) developable with basic aqueous solutions was prepared from poly(amic acid ethoxymethylester) (PAAE) as a polyimide precursor and diphenyliodonium 5-hydroxynaphthalene-1-sulfonate (DINS) as a photo acid generator.2 The norbornene-end-capped PAAE based on 4,4’-oxydiphthalic anhydride and 4,4’-oxydianiline exhibits high transparency at 365 nm. The protection ratio of the ethoxymethyl groups was optimized to maximize the difference between the dissolution rates of the exposed and unexposed areas. The acid generated from DINS in the UV-exposed region effectively deprotects the ethoxymethyl groups of PAAE by a chemical amplification mechanism. It was found that a 10 mm thick film of the PSPI precursor system containing 16 wt % DINS exhibits a sensitivity (Do) of 1,100 mJ/cm2 when developed with 2.38 wt % aqueous tetramethyl ammonium hydroxide solution at room temperature. A fine, positive, 5-mm line-and-space pattern was fabricated in a 15-mm-thick film with 1,500 mJ/cm2 of UV exposure. This resolution is excellent in comparison with those previously reported for chemically amplified PSPIs, and such a film can thus be used as a buffer coating in semiconductor packaging. 1. K. Horie, T. Yamashita, Photosensitive polyimides, fundamentals and applications; Technomic: Lancaster, 1995. 2. M. S. Jung, S. K. Jung, Y. Y. Park, B. S. Moon, B. K. Kim, US Patent 6,600,006. |
| 저자 | 박용영, 정명섭, 정성욱 |
| 소속 | 삼성종합기술원 |
| 키워드 | photosensitive polyimide; photolithography; polyimide |
