| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Electrical properties of 2-dimensional SnS2 grown by Atomic Layer Deposition at low temperature |
| 초록 | Since graphene was separated from graphite in 2004, there has been increased interest in 2-Dimensional (2D) materials. Graphene has been studied for application in future electronic devices such as flexible and wearable devices due to its high mobility, transmittance, and flexibility. However, the lack of band gap in pristine graphene leads to poor switching devices. This limitation has triggered much research to explore other 2D semiconducting materials as a replacement of graphene. Recently, Transition Metal Dichalcogenides (TMDs) have attracted considerable attention as alternatives to graphene. Atoms of TMDs are strong in-plane covalent bonding between metal-chalcogen and weak out-of-plane van der Waals bonding between layers. These TMD materials have a hexagonal structure similar to graphene and a suitable band gap for fabricating Thin Film Transistors (TFT). Similar to TMDs, SnS2 is an n-type semiconducting layered material that has a hexagonal structure. Many results has been reported in paper about SnS2, typically mechanical exfoliation, or chemical vapor transport method. However, in order to apply SnS2 in future electronic devices, especially for flexible and wearable ones, it must be grown in large area at low temperatures. In this study, we deposited few-layer SnS2 by Atomic Layer Deposition (ALD) and conducted post-deposition annealing to improve the crystallinity of SnS2 with an H2S and Ar gas mixture. In order to investigate the characteristics of few-layer SnS2, X-Ray Diffraction(XRD), X-ray Photoelectron Spectroscopy(XPS), Atomic Force Microscopy(AFM) and Raman spectroscopy were used. To analyze the m thickness of SnS2, Transmission Electron Microscopy(TEM) analysis was performed. Moreover, to evaluate the electrical properties, we fabricated bottom-gate field effect transistors on heavily doped Si substrate. |
| 저자 | 이남규, 이정수, 권세진, 최형수, 박현우, 방민욱, 이건우, 김소희, 서호준, 설원제, 이승백, 전형탁 |
| 소속 | 한양대 |
| 키워드 | 2-dimensional; SnS<SUB>2</SUB>; Atomic Layer Deposition |
