| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Quantitative Comparison of Silica and Ceria Abrasive Contamination on PVA Brush and Its Effect on Post CMP Cleaning Process |
| 초록 | Among various post CMP cleaning methods, PVA brush cleaning is considered as the most effective cleaning process to remove the abrasive particles remained on the wafer after CMP process. The brush cleaning involves the removal of residual particles by making direct contact with contaminants on the wafer surface at a high rotational torque. During cleaning process, the brush can be contaminated by abrasives. H. J. Kim et al. explained that the contaminated brush can re-contaminate the wafer and it would affect not only the cleaning efficiency and but also brush lifetime. In the semiconductor manufacturing processes, the usage of ceria over silica has been continuously increasing due to its characteristics of higher removal rate of SiO2 as well as higher selectivity of SiO2 to Si3N4. Many researchers have studied about the ceria particle contamination and its cleaning related to oxide wafer surface. It has been observed that ceria particles would produce higher contamination than silica. And also it is more difficult to remove from the wafer surface compared to silica because ceria particles possess strong Si-O-Ce bonds with oxide surface. However, there are no studies about particle contamination on PVA brush. In this study, the contamination of PVA brush at various conditions was evaluated by dipping and scrubbing experiments. |
| 저자 | 조휘원, 류헌열, 황준길, 이찬희, 김여호, 김태곤, Nagendra Prasad Yerriboina, 박진구 |
| 소속 | 한양대 |
| 키워드 | PVA Brush; Particle contamination; Post-CMP cleaning |
