| 학회 |
한국재료학회 |
| 학술대회 |
2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 |
15권 2호 |
| 발표분야 |
E. Frontiers of Materials Research(선도 재료연구) |
| 제목 |
On study crystal field energy and spin-orbit splitting energy for ZnIn2Se4 epilayers |
| 초록 |
ZnIn2Se4 epilayers crystal thin films was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The crystal field and the spin-orbit splitting energies for the valence band of the ZnIn2Se4 have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ5 states of the valence band of the ZnIn2Se4/GaAs epilayer. |
| 저자 |
유상하, 홍광준
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| 소속 |
조선대 |
| 키워드 |
crystal field energy; spin-orbit splitting energy; photocurrent spectra; Hopfield quasicubic model
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| E-Mail |
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