| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | A comparison of the properties of SiO2 film produced by RF and pulsed DC magnetron sputtering. |
| 초록 | Sputtering technique, a commonly used vacuum deposition method in the semiconductor industries, is classified into direct current (DC) sputtering, radio frequency (RF) sputtering and pulsed DC sputtering according to the type of applied power source. The DC sputtering has a high deposition rate of the thin film but it has a limitation in target selection. If using a metal oxide target with DC power, an arc is generated by charge accumulation around the target and which causes damage to the surface of the evaporated film. The RF sputtering technique, most widely used, is known to have all targets available and less damaged to the deposited film compared to other methods. However, the deposition rate is so slow that it is difficult to apply in the mass production. Recently to complement the disadvantages of the presented methods, deposition technique using DC pulsed power is suggested. Pulsed DC sputtering can use all targets because the system that periodically changes the (+) voltage and (-) voltage acts to reduce or eliminate the formation of arcs over conventional DC sputtering. In addition to this, the method has higher productivity than RF sputtering system. In this study, silicon dioxide (SiO2) thin film was evaporated by RF sputtering and pulsed DC sputtering system for comparing physical and optical properties. The variation of the process were the applied power density, oxygen contents versus argon contents and working pressure in each of the deposition system under room temperature. After than deposited SiO2 thin films were measured thickness, reflective index and transmittance by alpha step, ellipsometry system and UV-Vis/NIR, respectively. |
| 저자 | Eun mi, Park, Hye jin, Jeong, Moon Suhk, Suh |
| 소속 | 전자부품(연) |
| 키워드 | SiO<SUB>2</SUB>; RF sputtering; Pulsed DC sputtering |
