| 초록 |
Near-infrared (NIR) has high transmittance to the skin and has advantage of being able to data biometric information. Thus, developing highly efficient NIR light emission diodes (LEDs) is of technical importance. Semiconductor nanocrystals with size-dependent optical properties, also known as quantum dots (QDs), are promising light-emitting materials. Representative NIR active QDs such as lead sulfide nanocrystals or lead halide perovskites contain heavy-element lead with high toxicity. In this work, we fabricate NIR electroluminescence devices using lead-free copper indium sulfide (CuInS2) QDs as emissive layer (EML). The ligands of CuInS2 QDs are crosslinked through UV-sensitive photochemical reaction. The crosslinked QD films exhibit chemical resistance to substitutional solution processes. Therefore, the entire device fabrication could be done entirely through solution process. |
