| 초록 |
We developed an extremely flexible high performance organic non-volatile Fe-FET memory with p- and n-type carrier type modes. In both non-destructive carrier type modes, the device with solution-processed multiple layers exhibited excellent data retention and endurance of more than 6000 s and 100 cycles, respectively. Notably, our Fe-FETs were found to be highly robust towards severe mechanical stimuli such as bending, super-bending and folding, even without the use of an additional device protection treatment. No significant performance degradation was observed at extreme bending radii as low as 500 μm or even after sharp folding involving inelastic deformation of the device. Our results offer a novel design strategy for organic CMOS circuits that combine extreme mechanical flexibility with logic and memory functionalities. |
