| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | Characteristics of ink-synthesized Cu-gate thin film transistor with diffusion barrier |
| 초록 | ZnO-based oxide semiconductors offers promising switching elements for large area (＞100 in.) and fast-frame rate display due to its high mobility and low deposition temperature. However, as displays become larger, RC delay became critical issue in transporting gate signals on time. To reduce the signal delay Cu has been applied into electrode due to its low resistivity. However, Cu has critical problem; high tendency to diffuse into neighboring materials. With this respect, TaN gives a solution to block Cu diffusion as a diffusion barrier. However, Cu-gated oxide semiconductor TFTs with TaN diffusion barrier have been rarely reported in display industry. For last decades, vacuum technology has been used essentially in display area. However due to its high costs, many researches have been reported to fabricate solution based TFTs, but studies on Cu gate for TFT devices were usually excluded due to its difficulty in fabricating sub-nano sized particles for stable transistor devices. In this study, the electrical properties and effects of Cu diffusion in ink-synthesized Cu-gate thin-film transistors were studied. We investigated the film property and the effects ink-synthesized Cu layer with and without TaN diffusion barrier in detail with respect to device property. |
| 저자 | 김형준, 우황제 |
| 소속 | 연세대 |
| 키워드 | <P>Cu TFT; Thin film transistor; Cu diffusion</P> |
