| 초록 |
SnO is the most promising p-type transparent oxide semiconductors. SnO-channel TFTs show p-type operation because of their native polarities. A detailed progress concerning this topic was recently reported However, the current performance of p-type oxides is not yet satisfactory for commercial applications and It is crucial to realizing complementary metal-oxide semiconductor devices. In this study, we fabricated TFTs using polycrystalline tin oxides SnO channel were formed on Si/SiO2 substrate by a conventional sputtering method. We change the temperature to grow different crystal growth and then we finally obtain the preferred orientation film property results. We used Raman and I-V measurement to analysis these TFTs for observing how the preferred orientation of SnO is changed by different low temperature. |
