| 학회 |
한국재료학회 |
| 학술대회 |
2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 |
20권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Effects of varying Radio Frequency on Properties of SiNx:H films for Silicon Solar Cells |
| 초록 |
The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition (PECVD) is widely used in silicon solar cell industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiNx:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For suitable passivation layer in crystalline silicon solar cells, by varying Radio Frequency (High Frequency(HF): 13.56 MHz, Low Frequency(LF): 400 kHz, Dual Frequency(DF): HF+LF) of PECVD, the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation properties. Also, the comparison of the three sets solar cell efficiency and results according different front side layers. |
| 저자 |
Kyung Dong Lee1, Seongtak Kim2, Kwang-sun Ji1, Hyunho Kim2, Sungeun Park1, Soohyun Bae2, Hae-seok Lee1, Yoonmook Kang2, Donghwan Kim1
|
| 소속 |
1Department of Materials Science and Engineering, 2Solar Energy Research Center of Korea Univ. |
| 키워드 |
silicon solar cells; silicon nitride; passivation; frequency of PECVD
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| E-Mail |
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