| 초록 |
The organic thin film transistors have attracted much interest from researchers due to its low cost and disposability. However, the performance of the organic thin film transistor (oTFT) has been affected by many factors such as the thickness of the gate dielectrics. Therefore, many attempts have been made to obtain thin gate dielectrics using solution based methods such as spin-coating or self-assembled monolayers. Although these achievements are promising, problems have been arisen. In the spin-coating method, effects such as oxidation by the solvent may affect the performance of the device. In case of self-assembled monolayer, the problems occurred by solvent were overcome. However, unexpected byproducts can be found by the sulfide or halide group of monomer. Here, we report a new ultra-thin gate dielectric for oTFT which is free of solvent and byproduct by depositing poly(cyclotrisiloxane) using the newly developed iCVD (initiated chemical vapor deposition) technique. |
