| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
대학원생 구두발표 |
| 제목 |
Effect of the interface between n-doped and undoped electron transporting layers on the performance of inverted bottom emission organic light emitting diodes |
| 초록 |
Based on the energy levels and the current density-voltage characteristics of electron only devices, we demonstrate that the interface between an n-doped electron transporting layer (n-ETL) and an ETL is as important as the interface between the cathode and the n-ETL for efficient electron injection into an emitting layer. A high performance inverted bottom emission organic light emitting diode with a maximum external quantum efficiency of 20% and a maximum power efficiency of 80 lm/W was realized by properly selecting an electron transporting material to have no energy barrier for electron injection between the doped and undoped ETL. |
| 저자 |
이정환1, 박형돌1, Po-Sheng Wang2, Chih-I Wu2, 김장주1
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| 소속 |
1서울대, 2National Taiwan Univ. |
| 키워드 |
n-i-p inverted OLED; interface energy barrier; electron transport material
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| E-Mail |
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