| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | Infrared wavelength conversion in AlGaAs: periodically inverted quasi phase matching and high-index-contrast birefringent phase matching devices |
| 초록 | Compound semiconductors GaAs and AlGaAs which have high quadratic optical nonlinearities are attractive materials for wavelength conversion applications. However the optical isotropy of cubic semiconductor crystals prevents achieving birefringent phase matching. To overcome the obstacle in GaAs and AlGaAs system, various phase matching techniques achieving momentum conservation have been introduced. Among the approaches, quasi phase matching (QPM)1) utilizing periodically alternating sign of the nonlinear coefficient is the most popular phase matching method. Recently, a crystal growth technique called sublattice-reversal epitaxy2) has been developed for periodically-inverted structures and AlxGa1-xAs QPM waveguides fabricated through the sublattice-reversal epitaxy technique have shown remarkable results. In spite of the achievements, however, investigations about the periodically-inverted AlxGa1-xAs QPM structures have been conducted only in roundabout ways such as preferential etching. For more competent comprehension of the spatial modulation formed by the sublattice-reversal epitaxy technique, I conducted transmission electron microscope (TEM) analysis and confirmed microstructural features of the periodically-inverted AlxGa1-xAs QPM waveguides. Especially in a Al0.5Ga0.5As QPM waveguide designed for the near-infrared wavelength region, plenty of planar defects suspected to induce various problems were observed. In this talk, I will discuss about microstructural analysis of the periodically-inverted AlxGa1-xAs QPM devices and report realization of a theoretical concept called high-index-contrast birefringent phase matching (HIC-BPM)3) as an alternative for wavelength conversion in the near-infrared wavelength region. 1) S. J. B. Yoo, R. Baht, C. Caneau and M. A. Koza, Appl. Phys. Lett., 66, 3410 (1995). 2) S. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki, R. Ito, Jpn. J. Appl. Phys., 37, L1493 (1998). 3) H. Ishikawa and T. Kondo, Appl. Phys. Express, 2, 042202 (2009). |
| 저자 | Takashi Kondo1, Tomonori Matsushita2, 김태웅1 |
| 소속 | 1The Univ. of Tokyo, 2Research Center for Advanced Science and Technology |
| 키워드 | III-V semiconductors; Sublattice-reversal; Harmonic generation; Frequency conversion; Transmission electron Microscopy |
