| 초록 |
In this study, we report the universal approaches for high-performance and reliable p-channel lead-free phenethylammonium tin iodide TFTs. These include self-passivation for grain boundary by excess phenethylammonium iodide, grain crystallisation control by adduct, and iodide vacancy passivation through oxygen treatment, as schematically shown in Fig. 1. We found that the grain boundary passivation can increase TFT reproducibility and reliability, and the grain size enlargement can hike the TFT performance; thus, enabling the first perovskite-based complementary inverter demonstration with n-channel indium gallium zinc oxide (IGZO) TFTs. The inverter exhibits a high gain over 30 with an excellent noise margin. This work aims to provide widely applicable and repeatable methods to make the gate more open for intensive efforts towards high-performance printed perovskite TFTs. |
