| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
UV Photoluminescence from focused gallium-ion beam induced color centers in the atomically thin hexagonal boron nitride |
| 초록 |
Hexagonal boron nitride (hBN), an insulator which gives excellent encapsulation of two-dimensional materials like graphene and transition metal dichalcogenides, has recently emerged as a promising material which exhibit polarized and high-brightness, room-temperature quantum emission from color centers. Many different methods have been performed to generate color centers in hBN such as thermal annealing, strain, and electron irradiation. In this work, we demonstrated 30keV gallium (Ga) ion beam irradiation on hexagonal boron nitride flake to create color centers. Through the focused Ga ion beam induced color centers in the hBN, we can observe various luminescence characteristics of hexagonal boron nitride in ultraviolet range. The result will show the potential of hexagonal boron nitride and development of hybrid quantum nanophotonic and optoelectronic devices based on the atomically thin hBN heterostructures. |
| 저자 |
Kyujin Kim1, Young Duck Kim2, Seungmin Park3, Jun Hyun Kang4, Young Dong Kim5, Gwan-Hyoung Lee6, Il Ki Han3
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| 소속 |
1Korea Institute of Science and Technology, 2Nanophotonics Research Center, 3Seoul, 4Republic of Korea, 5Department of Physics, 6Kyung Hee Univ. |
| 키워드 |
<P>hexagonal boron nitride; color center; focused ion beam; UV-PL</P>
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| E-Mail |
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