| 초록 |
Silicon strain gauge fabrication is mainly manufactured by using dry etching, CMP(Chemical-Mechanical-Polishing). However, if dry etching and CMP process are used, not only some limitations of producing below a certain level of thin film strain gauge but expensive cost and risk of damage such as bending. To solve these problems that mentioned before, we use SOI(Silicon-On-Insulator)wafer and dry and wet etching process for making silicon strain gauge. First, We do Ion Implantation on SOI Wafer and after this process, we did annealing process to stabilize SOI surface. Second, making gauge pattern on SOI wafer by using photolithography and RIE process. Finally, we soak SOI wafer into BOE solution to remove oxide layer and release strain gauges. We analysed characteristics and properties of released silicon strain gauge and measurement error. Resistance is 13.8㏀ and measurement error is within 1%. Gauge thickness is 21㎛. |
