| 초록 |
The critical chemical process in the manufacture of semiconductors is the definition of the very fine circuitry on the semiconductor substrate by microlithography. Currently the aqueous base development of phenolic and carboxylic acid polymers is the basis of the high fidelity imaging processes used in modern microlithography. The formation of the fine circuitry in a semiconductor device is dependent upon the aqueous base solubility characteristics of the unexposed and exposed regions of the photoresist film. It is therefore extremely important to understand how the components and architecture of the photoresist polymer affect aqueous base dissolution. This paper reviews the effect of polymer architecture on the dissolution behavior of phenolic and carboxylic acid based chemically amplified photoresist systems. The behavior of the predominant polymer architectures used in microlithography are described, including the investigation of linear and branched poly(4-hydroxystyrene) and copolymers thereof, and the study of (meth)acrylate carboxylic acid based polymeric systems. Further the dissolution behavior of these polymer architectures will be related to the high performance imaging requirements for advanced semiconductor manufacture, as resolution is pushed below 40nm features for ArF immersion lithography and sub 30nm features using EUV lithography. |
