| 초록 |
Since its development by Geim in 2004, graphene has received a lot of attention from researchers because of its excellent electrical, chemical and mechanical properties. However, because of the character of the two-dimensional material, graphene is an all-surface material that exposes the entire surface to the outside and is therefore very sensitive to external effects. As a result, the theoretically high electrical properties are difficult to obtain at room temperature, resulting in underestimation of graphene quality. Many fitting models have been proposed to prevent this underestimation and various attempts have been made to remove the contact resistance of graphene devices. However, contact region between graphene and electrode have a very small portion of the device structure, and therefore the external effect of contact resistance is difficult to call a major effect. Rather, the main factor can have said the effect of the dielectric substrate, which is in contact with the whole surface of the FETs. In this study, we present a method to more accurately analyze the quality and mobility of graphene as a fitting model that separates additional effects generated by such dielectric surfaces. Further, by analyzing the mechanism of external influences that graphene devices receive, we expect to provide the best recipe for high performance of graphene devices. |
