| 초록 |
We demonstrate a highly reliable and mechanically flexible MLC Fe-FET with a ferroelectric poly(vinylidene fluoride)-co-trifluoro ethylene (PVDF-TrFE) insulator. Our device is based on multileveled non-volatile drain current states of a polymeric semiconductor precisely controlled by a ferroelectric insulator. Various remnant polarization states which arise from distributed domain polarization of the ferroelectric layer as a function of the applied gate voltage in turn dictate the interstate levels of the source-drain current, giving rise to a highly reliable 4-level MLC Fe-FET. Each level of the device exhibited excellent data retention and endurance of more than 100000 seconds and 100 cycles, respectively. Furthermore, our gate-controlled multilevel Fe-FETs with poly(3-hexyl thiophene) (P3HT) active channels are mechanically flexible with characteristic multilevels even after more than 1,000 bending cycles, with a bending radius of 5.8 mm. |
