| 초록 |
The development of large-area, high-resolution nano-patterning with high-aspect-ratios is a challenging problem that must be solved for potential applications in high performance nanoscale devices. To date, nano-imprinting, and soft-, e-beam, dip-pen (DPN), and soft-building block-lithography have been primarily used in such applications. Here, we describe two new patterning techniques that enables fabrication of ultra high-resolution and high-aspect-ratio patterns of various shapes. First, we introduce an advanced ultrahigh-resolution (ca. 15 nm) patterning technique that enables the fabrication of various 3D high aspect ratio (ca. 10) multi-components/shaped nanostructures. This methodology utilizes the repetitive secondary sputtering phenomenon under etching plasma conditions and prepatterned fabrication control. This method provides many strategies to fabricate complex continuous patterns and multilayer/material patterns with 10 nm-scale resolution. |
