| 초록 |
Copolymers containing Methacrylate Cu(COD) complex, methylmethacrylate (MMA) and methacrylic acid (MAA) was polymerized by free radical polymerization. According to the composition of copolymer, Cu ions in copolymer solution are reduced by chemical reduction and form nanonetwork. Cu ions in coated copolymer film on Si wafer are reduced by electron beam reduction and form thin Cu film consists of Cu nanoparticles. Since this copolymer is soluble in weak base developer like a TMAH aqueous solution, Cu pattern is generated on Si wafer through electron beam lithography and develop process like a general negative photoresist process. This pattern is created with electron beam relatively low doses in the uC/cm2 range |
