| 초록 |
Nickel-bis(dithiolene) dyes have been the subject of extensive research due to their strong absorbance in near-infrared(NIR) region and high photo- and thermal-stability. Despite the interesting optical properties of absorbing NIR regions, few attempts have been made to apply these dyes to NIR absorbing filters for CMOS image sensors. In this work, our interest is focused on designing the nickel bis(dithiolene) dyes in order to obtain desired properties, such as solubility in organic solvents, absorption maxima, and molecular extinction coefficients. A series of dyes were synthesized and material properties were measured by UV-vis spectroscopy and thermogravimetric(TGA) analysis. Furthermore, we studied the change of properties related with structure of the molecule. These nickel bis(dithiolene) dyes appear to be potential candidates for use in NIR absorbing filter for CMOS image sensors. |
