| 학회 | 한국화학공학회 |
| 학술대회 | 2009년 가을 (10/22 ~ 10/23, 일산 KINTEX) |
| 권호 | 15권 2호, p.2198 |
| 발표분야 | 재료 |
| 제목 | Growth of Epitaxial Gallium Nitride film on c-plane Sapphire using Ga(mDTC)3 precursor by MHVPE |
| 초록 | Tris N,N-dimethyldithiocarbamato gallium (III) (Ga(mDTC)3) is used as precursor for formation of GaN seed-layer. GaN seed layer is deposited by a spin-coating method and then this layer is nitrified on c-plane sapphire substrate in NH3/N2 ambient circumstance before the deposition of GaN epitaxial layer using a modified hydride vapor phase epitaxy (MHVPE). Structural properties and surface morphologies of GaN layers are analyzed by X-ray diffractometer (PANalytical, X’Pert PRO) and Scanning Electron Microscope (Hitachi, S-4100). The band structures of GaN films are investigated by a photo-luminescence spectroscopic method. Acknowledgement: This work was supported by the Korea Research Foundation (KRF) grant funded by the Korea government (MEST)(No. 2009-0077228). |
| 저자 | 홍기남, 김동욱, 김홍탁, 박진호 |
| 소속 | 영남대 |
| 키워드 | Gallium Nitride; Seed layer; Ga(mDTC)3 precursor; MHVPE |
| 원문파일 | 초록 보기 |
