| 학회 |
한국재료학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 |
25권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Stress Release Effect of AlGaN with AlN/AlGaN Interlayer Grown by MOCVD |
| 초록 |
The tensile stress is generated in the AlGaN thin film in the case of forming the AlGaN template for ultraviolet light emitting diodes (UV-LEDs), resulting in cracking of the AlGaN surface. Many researchers have attempted to solve this phenomenon with various methods. In this work, we tried to solve the phenomenon by inserting interlayer between thin films with different Al contents. By using patterned sapphire substrate (PSS), the AlGaN growth was induced on c-plane at the space between the patterns. AlGaN with high Al content was grown on PSS using metal organic chemical vapor deposition (MOCVD). AlN buffer layers were prepared before the growth of AlGAN templates take place in MOCVD. Raman spectroscopy was used for stress analysis in the AlGaN thin film. The morphology and the crystallinity of AlGaN templates were investigated by optical microscopy (OM), scanning electron microscopy (SEM), x-ray diffraction (XRD) and atomic force microscopy (AFM). This work was supported by the Technology Innovation Program (10067492) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). |
| 저자 |
심규연, 정우섭, 조승희, 안민주, 강성호, 변동진
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| 소속 |
고려대 |
| 키워드 |
<P>AlGaN; UV-LED; stress; MOCVD</P>
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| E-Mail |
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