| 학회 |
한국고분자학회 |
| 학술대회 |
2022년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
47권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Universal Charge Transfer p-Doping Method for Enhancement of Intrinsic Properties in Sn-based Perovskite Films |
| 초록 |
Doping is applied in semiconductors for effective control of the charge carrier density.1 The scarcity of stable doping method for p-type perovskites has limited their development. Specifically, 2D perovskite has high stability, but low intrinsic properties due to insulating organic spacers that act as barriers against charge transport.2 Here, an efficient and stable charge transfer doping method for p-type 2D perovskite semiconductors with Tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) and Molybdenum oxide (MoO3) is reported. The deposition of F4-TCNQ and MoO3 on top of phenylethyl ammonium tin iodide ((PEA)2SnI4) results in increase of carrier concentration and Hall mobility. This p-doping method provides an in-depth insight to carrier dynamics and an universal pathway to high-performance and reliable p-type 2D perovskite opto-electronic applications. 1. B. Saparov and D. B. Mitzi. Chem. Rev. 116, 4558-4596 (2016) 2. J. Euvrard et al. Nat. Rev. Mater. 6, 531-549 (2021) |
| 저자 |
노유진, HUIHUI ZHU, AO LIU, 노용영
|
| 소속 |
포항공과대 |
| 키워드 |
2D Pb-free perovskite; p-doping; intrinsic properties; Hall measurement
|
| E-Mail |
|
