| 초록 |
Simple fabrication of solution-based organic n-type dopant is critical for low-cost organic electronics. In this study, we found a simple method for preparing organic n-type dopant using an organic cationic dye and a reducing agent. After coating the reduced cationic dye on graphene film, work function of graphene is reduced from 4.5 eV to 3.98 eV. The work functions were estimated using Ultraviolet photoelectron spectroscopy (UPS). The dopant is effective for graphene field effect transistors and organic field effect transistors. Also, the dopant can change the work function of graphene. This effect can improve the electronic performance of organic filed effect transistors. We also demonstrate a selective stamp n-type doping using polydimethylsiloxane and the reduced cationic dye on 16 × 16 graphene field effect transistor array in a large array. In this study, we represent a important method for the solution-phase modulation of electronic performance of graphene and organic electronics. |
