| 초록 |
We have investigated photosensitive polyimides, which can be used for gate dielectrics of organic thin-film transistor (OTFT) on flexible polymeric substrates. A series of polyimide precursors was prepared from various dianhydrides and novel aromatic diamine with photo-functional coumarin moiety, which was synthesized from 3,5-dinitrobenzoyl chloide and 7-hydroxycoumarin followed by reduction using hydrochloric acid and iron powder. Pentacene TFT using the polyimide prepared from 3,3',4,4'-benzophenone tetracarboxylic dianhydride as the gate dielectric showed field effect mobility above 0.03 cm2/V-s. In this study, we have also changed surface properties of polyimide dielectrics by introduction of rubbing process or linearly polarized UV irradiation process. And then relationship of surface properties of polyimide gate dielectrics and field-effect mobility of pentacene TFTs has been investigated.
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