| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 가을 (10/06 ~ 10/08, 대구컨벤션센터(EXCO)) |
| 권호 |
40권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Low Temperature HfO2 Thin Film Encapsulation for Organic Light-Emitting Diodes Grown by Plasma-Enhanced Atomic Layer Deposition |
| 초록 |
Encapsulation is an essential process for organic light-emitting diodes (OLEDs) to protect air-sensitive components such as active layers and cathode electrodes. Thin film encapsulation based on an oxide layer is one of the most suitable candidates for flexible electronics including OLEDs due to the advantages of mechanical flexibility, thinness, and easy process. In this study, we examined barrier properties of PEALD based HfO2 films with different process condition by the Ca test. In addition, the electrical characteristics (J-V-L) and shelf-life for OLED devices with HfO2 passivation films were investigated. |
| 저자 |
박찬언, 정용진, 백용화, 박선욱, 장진혁, 김래호
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| 소속 |
포항공과대 |
| 키워드 |
HfO2; thin film encapsulation; plasma-enhanced atomic layer deposition (PEALD); organic light-emitting diodes (OLEDs);
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| E-Mail |
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