| 초록 |
Recently simple binary and ternary semiconductors such as PbS, SnS, Sb2S3, and Sb2Se3 have attracted intensive attention as a low-cost and stable light absorbing materials. Among them, Sb2Se3 binary chalcogenide compound is considered to be a promising photovoltaic material due to their relatively low toxicity, long term stability, and earth abundant element availability. In this work, we have tried to deposit Sb2Se3 thin films by using plasma enhanced atomic layer deposition (PEALD), which was proceeded by the reaction of tetrakis (dimethylamino) antimony (TDMASb) and diethylselenide (DESe) at low temperature (120°C). We observed the deposition rate, crystalline structure, morphology, chemical composition, and impurity of Sb2Se3 thin films prepared by PEALD. We have investigated the possibility of ALD Sb2Se3 as a photovoltaic absorber. This work was supported by the DGIST R&D Programs of the Ministry of Science, ICT & Future Planning of Korea (20-ET-08). |
