| 초록 |
Molecularly hybridized materials composed of polymer semiconductors (PSCs) and single-walled carbon nanotubes (SWNTs) may provide a new way to exploit an advantageous combination of semiconductors, which yields electrical properties that are not available in a single component system. We demonstrate high-performance ink-jet printed transistors with an electrically engineered heterostructure by using specially designed PSCs and semiconducting SWNTs (sc-SWNTs) whose system achieved a high mobility of 0.23 cm2V-1s-1, no Von shift, and a low off-current. PSCs were designed by calculation of density of states (DOS) of backbone structure which was related to charge transfer. We also revealed that binding energy between PSCs and sc-SWNT was strongly affected by side-chain length of PSCs, leading to the formation of homogeneous nanohybrid film. |
