| 초록 |
The next generation microchips call for ultralow dielectrics (k ＜ 2.2) to reduce the RC delay, cross-talk noise and power dissipation caused by the shrinkage of circuits. However, the current development of ULK materials has reached the limit due to their poor mechanical properties. In this study, O3/UV treatment on ULK films was performed to enhance the mechanical properties. ULK films were treated by O3 at 110 ℃, and then UV irradiation at 430 ℃. The O3 treatment at 110 ℃ was very effective in improving the mechanical properties of ULK materials due to increased reactivity between OSG matrix and reactive porogens without the decomposition of pendent methyl groups which were confirmed by FT-IR. The UV treatment at 430 ℃ was also effective in improving the mechanical properties and stability due to increased Si-O-Si network structures and reduced Si-OH groups. Consequently, O3/UV treated ULK films showed remarkably increased elastic modulus from 9.1 GPa to 15.5 GPa. |
