| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Dielectric Properties of PCB Embedded Bismuth-Zinc-Niobium Films Prepared using RF Magnetron Sputtering |
| 초록 |
Dielectric properties of bismuth-zinc-niobium oxide (Bi1.5Zn1.0Nb1.5O7, BZN) thin films deposited by by RF magnetron sputtering have been investigated for embedded capacitor. Crystalline BZN has a pyrochlore structure in nature and shows a dielectric constant of ~ 200 with very low leakage current when crystallized. Since the process temperature is limited to ＜ 200 ℃ due to an organic based substrate in printed circuit board, as-deposited BZN film was composed of an amorphous phase, confirmed by XRD analysis. However, it showed remarkably high dielectric constant of 113. It makes BZN to be a proper candidate as a decoupling embedded capacitor in power delivery circuits. Effects of post treatment such as oxygen plasma treatment and low temperature thermal annealing on dielectric properties of BZN thin films were studied. By optimizing deposition conditions, amorphous BZN thin film was well processed in the current printed circuit board (PCB) process and provided a capacitance density as high as 218 nF/cm2 and leakage current less than 1 μA/㎠ at 3V. |
| 저자 |
이승은1, 이정원1, 이인형2, 송병익1, 정율교1
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| 소속 |
1삼성전기 생산기술(연), 2삼성전기 중앙(연) |
| 키워드 |
thin film; BZN; sputtering; dielectric property
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| E-Mail |
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