| 초록 |
Copper(I) thiocyanate (CuSCN) has been considered as a promising p-type semiconductor material due to its high charge carrier mobility (Hall mobility) about 10 ~ 70 cm2/Vs. However, previous thin film transistors (TFTs) with CuSCN have been reported low field effect mobility in the range of 0.01 ~ 0.5 cm2/Vs. In this work, to realize high mobility CuSCN-TFTs, we introduced vertical structure and chlorine doping method. Employing vertical structure, the charge carriers can be transported along the normal direction of channel layer and the device exhibited high mobility about 3 cm2/Vs with low operation voltage of 1V. When we doped SnCl into CuSCN, the work function of material increased by 5.97 eV, resulting in enhanced mobility about 4 cm2/Vs. Using this high performance TFTs, we could successfully demonstrate resistor-loaded inverters. |
