학회 |
한국고분자학회 |
학술대회 |
2007년 봄 (04/12 ~ 04/13, 제주 ICC) |
권호 |
32권 1호 |
발표분야 |
기능성 고분자 |
제목 |
Low-drive-voltage organic light-emitting diodes with rhenium oxide-doped hole transport layer |
초록 |
Doping the charge transport layers with metal oxide dopants has attracted much attention for lowering driving voltage and improving power efficiency of the organic light emitting-diodes. In this work, we report new promising metal oxide-doped hole transport layer (HTL) system such as rhenium oxide (ReO3)-doped NPB. The Alq3-based devices with NPB:X%ReO3(60nm)/NPB(15nm) and single NPB(75nm) HTL layers are fabricated. The devices with ReO3-doped NPB layer exhibit driving voltage of 5.4 V and power efficiency of 2.3 lm/W at 20 mA/cm2, which is significantly improved compared to those (7.0 V and 2.0 lm/W, respectively) obtained from the devices with un-doped NPB layer. Furthermore, the devices with ReO3-doped NPB layer reveal four times longer half-life time (at 2000 cd/m2) than that with un-doped NPB. Based on the UV-Vis absorption spectra and characteristics of hole-only devices, details about rhenium oxide doping effects on the device performance are described and discussed. |
저자 |
임동석, 박형돌, 강재욱, 이재현, 김지환, 김장주
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소속 |
서울대 |
키워드 |
organic-light emitting diodes; doping of charge transport layer; rhenium oxide
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E-Mail |
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