화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2007년 봄 (04/12 ~ 04/13, 제주 ICC)
권호 32권 1호
발표분야 기능성 고분자
제목 Low-drive-voltage organic light-emitting diodes with rhenium oxide-doped hole transport layer
초록 Doping the charge transport layers with metal oxide dopants has attracted much attention for lowering driving voltage and improving power efficiency of the organic light emitting-diodes. In this work, we report new promising metal oxide-doped hole transport layer (HTL) system such as rhenium oxide (ReO3)-doped NPB. The Alq3-based devices with NPB:X%ReO3(60nm)/NPB(15nm) and single NPB(75nm) HTL layers are fabricated. The devices with ReO3-doped NPB layer exhibit driving voltage of 5.4 V and power efficiency of 2.3 lm/W at 20 mA/cm2, which is significantly improved compared to those (7.0 V and 2.0 lm/W, respectively) obtained from the devices with un-doped NPB layer. Furthermore, the devices with ReO3-doped NPB layer reveal four times longer half-life time (at 2000 cd/m2) than that with un-doped NPB. Based on the UV-Vis absorption spectra and characteristics of hole-only devices, details about rhenium oxide doping effects on the device performance are described and discussed.
저자 임동석, 박형돌, 강재욱, 이재현, 김지환, 김장주
소속 서울대
키워드 organic-light emitting diodes; doping of charge transport layer; rhenium oxide
E-Mail