| 초록 |
We investigate the effect of n-type layer in CGL unit with 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), as p-type layer. The n-type layer was systematically studied with different electron transporting layers (ETL) and doping ratio on rubidium carbonate (Rb2CO3) doped ETL in CGL units with HAT-CN. From comparison of current density-voltage characteristics of CGL unit devices and capacitance-voltage studies, the voltage drop for charge carrier generation in CGL unit depends on the vacuum level shift, electron mobility, and free carrier density of ETL, rather than the LUMO energy level of ETL. Moreover, the voltage drop for charge generation in CGL unit can be further reduced by higher doping ratio of n-ETL. The mechanism of charge generation and recombination is suggested by tunneling of electron through thin depletion layer which was around 5 nm thick. |
