| 학회 |
한국재료학회 |
| 학술대회 |
2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 |
24권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode |
| 초록 |
In this study, to improve the light extraction efficiency of light emitting diodes(LEDs), we investigated new methods that form an air void on patterned sapphire substrate (PSS) without etching process. It is confirmed that GaN was grown on specific planes such as n-like plane, c-plane and r-plane in PSS by the behaviour of GaN growth on PSS as time changes. Based on the behaviour of GaN growth on PSS, adequate thickness of photoresist was coated by spin coator process for selective growth on PSS. The photoresist needs to be carbonized and selective GaN growth for forming air void. We investigated optimized carbonation time and temperature and succeeded in forming a GaN epi-layer including an air void. |
| 저자 |
정우섭, 조승희, 고현아, 이두원, 안민주, 심규연, 변동진
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| 소속 |
고려대 |
| 키워드 |
<P>Void; LED; photoresist; carbonization; PSS; GaN; epitaxial</P>
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| E-Mail |
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