| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Electrical properties for ZnIn2S4 Single Crystal Thin Film grown by Hot Wall Epitaxy |
| 초록 |
Single crystal ZnIn2S4 layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at 450 ℃ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of ZnIn2S4 at 610 ℃prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal ZnIn2S4 thin films measured with Hall effect by van der Pauw method are 8.51×1017 electron/cm-3, 291 cm2/v-s at 293K, respectively. The photocurrent and the absorption spectra of ZnIn2S4 /SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. |
| 저자 |
유상하, 홍광준
|
| 소속 |
조선대 |
| 키워드 |
carrier density; mobility; Hall effect; energy band gap
|
| E-Mail |
|
