| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Additive effects on solution-processed indium oxide based thin-film transistor under UV irradiation |
| 초록 |
The next generation technology in display area has been focusing on wearable, ultra-light and optically transparent technology with time and cost efficiency in fabrication. The researches on thin-film transistor(TFT) that is a key component of display have used various types of material and solution-processed metal oxide showed advantages of environmental stability, large-area and low-cost processibility. However, high-temperature was essential for the processing to get dense film and it was difficult to apply on flexible substrate, thus many researches like photochemical activation and combustion chemistry were studied for the purpose of decreasing temperature. In this study, nitrate compound was used for both photochemical activation under deep-UV(DUV) irradiation and combustive fuel that could generate internal energy required for sol-gel condensation reaction. It results in rapid photo-cleavage of carbon impurities and it was confirmed that the film densification proceeded around 200ºC dramatically. Electrical characteristics of indium oxide used TFTs showed the tendnecy by the concentration of additive and the mobility was about 8 cm2V-1s-1. Furthermore, it formed crystalline structure of indium oxide at low temperature as low as 200ºC. |
| 저자 |
Jun-Gyu Choi1, Myung-Han Yoon1, Won-June Lee1, Sungjun Park2
|
| 소속 |
1Gwangju Institute of Science and Technology, 2RIKEN |
| 키워드 |
nitrate compound; photochemical activation; combustion chemistry; thin-film transistor
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| E-Mail |
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