| 학회 |
한국재료학회 |
| 학술대회 |
2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 |
24권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
GaN Template Fabrication on Trapezoid Patterned Sapphire Substrate using SOG Mask with Different Buffer Layers |
| 초록 |
Light emitting diode(LED) devices with air void have been gained much attention. Light extraction efficiency(LEE) of LEDs with air void can be increased due to the nonplanar interface between patterned sapphire substrate(PSS) and GaN. In this work, the GaN templates were fabricated by suppressing lateral growth of c-plane using spin-on-glass(SOG) material which can decreses the refractive index difference between sapphire substrate and GaN. By using trapezoid patterned sapphire substates(TPSS), the GaN growth was induced at the top region of the TPSS while suppressing the growth on c-plane at the space between the patterns. SOG masks were polished by chemical mechanical polishing(CMP) according to the height at which the top region of the TPSS was exposed so that GaN could be grown on the top region of the TPSS. The GaN templates with different buffer layers such as low temperature GaN(LT-GaN) or AlN were grown by metal organic chemical vapor deposition(MOCVD). LT-GaN buffer layers were prepared before the growth of GaN template begins in MOCVD system but the AlN buffer layers were preapared in sputtering system. The morphology and the crystallinity of GaN templates were confirmed by scanning electron microscopy(SEM) and x-ray diffraction(XRD). This work was supported by the Technology Innovation Program (10067492) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). |
| 저자 |
심규연, 정우섭, 조승희, 고현아, 이두원, 안민주, 강성호, 변동진
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| 소속 |
고려대 |
| 키워드 |
<P>GaN; sapphire; SOG; buffer layer</P>
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| E-Mail |
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