| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
E. Structural Materials and Processing Technology(구조재료 및 공정기술) |
| 제목 |
Studies on valence-band splitting energy photocurrent spectra of CdGa2Se4 layers |
| 초록 |
The photoconductive CdGa2Se4 layer was grown through the hot wall epitaxy method. From the photocurrent (PC) measurements, the three peaks in the PC spectra are associated with the band-to-band transitions. The PC intensities were observed to decrease with decreasing temperature. Also, the valence-band splitting on CdGa2Se4 could be observed by means of the PC spectroscopy. The crystal field splitting and the spin orbit splitting led out to be 0.1604 and 0.4179 eV, respectively. The temperature dependence of the optical band gap on the CdGa2Se4 by conducting the PC measurement has been precisely estimated. Furthermore, the band-gap energy of CdGa2Se4 at room temperature found out 2.5446 eV. |
| 저자 |
Kwangjoon Hong |
| 소속 |
Department of physics Chosun Univ. |
| 키워드 |
CdGa2Se4; Photocurrent; Valence band splitting; Band gap
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| E-Mail |
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