| 초록 |
The single crystals of p-CdIn2Te4 were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of Γ7(A), Γ6(B), and Γ7(C) to the conduction band state of Γ6, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the CdIn2Te4 band gap energy was given by the equation of Eg(T)= Eg(0)- (9.43 x10-3)T2/(2676+ T). Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-CdIn2Te4 at room temperature was determined to be 1.2023 eV. |
